Publications

Equilibrium point defect and charge carrier concentrations in a material determined through calculation of the self-consistent Fermi energy

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Intrinsic point defects and the $n$- and $p$-type dopability of the narrow gap semiconductors GaSb and InSb

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Donor and acceptor characteristics of native point defects in GaN

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The electronic band structure and optical properties of boron arsenide

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Dispelling the Myth of Passivated Codoping in TiO$_2$

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Oxidation states and ionicity

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Mobility in gated GaN$_x$As$_{1−x}$ heterostructures as a probe of nitrogen-related electronic states

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