Wide-Gap Semiconductors
John Buckeridge
Lecturer in Energy Engineering and Materials Devices
Materials physicist working at the School of Engineering - Division of Electrical and Electronic Engineering, London South Bank University.
Publications
Donor and acceptor characteristics of native point defects in GaN
The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many …
Dispelling the Myth of Passivated Codoping in TiO$_2$
Modification of TiO$_2$ to increase its visible light activity and promote higher performance photocatalytic ability has become a key …
