Dilute Nitride and Bismide Semiconductors
John Buckeridge
Lecturer in Energy Engineering and Materials Devices
Materials physicist working at the School of Engineering - Division of Electrical and Electronic Engineering, London South Bank University.
Publications
Intrinsic point defects and the $n$- and $p$-type dopability of the narrow gap semiconductors GaSb and InSb
The presence of defects in the narrow-gap semiconductors GaSb and InSb affects their dopability and hence applicability for a range of …
